[PS-3-24] Effect of Anneal Process on Trap Properties in Metal/High-k Gate MOSFETs through RTN Characterization

H. F. Chiu¹、S. L. Wu²、Y. S. Chang¹、S. J. Chang³、S. C. Tsai³、P. C. Huang³、O. Cheng⁴ (1.National Tsing Hua Uni.、2.Cheng Shiu Uni.、3.National Cheng Kung Uni.、4.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-24