The Japan Society of Applied Physics

[PS-3-24] Effect of Anneal Process on Trap Properties in Metal/High-k Gate MOSFETs through RTN Characterization

H. F. Chiu1, S. L. Wu2, Y. S. Chang1, S. J. Chang3, S. C. Tsai3, P. C. Huang3, O. Cheng4 (1.National Tsing Hua Uni., 2.Cheng Shiu Uni., 3.National Cheng Kung Uni., 4.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-24