[PS-3-24] Effect of Anneal Process on Trap Properties in Metal/High-k Gate MOSFETs through RTN Characterization

H. F. Chiu¹, S. L. Wu², Y. S. Chang¹, S. J. Chang³, S. C. Tsai³, P. C. Huang³, O. Cheng⁴ (1.National Tsing Hua Uni., 2.Cheng Shiu Uni., 3.National Cheng Kung Uni., 4.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-24