[PS-3-25] Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹、S. L. Wu²、C. Y. Wu³、C. W. Huang⁴、T. Y. Lu⁵、P. C. Huang⁶、S. J. Chang⁷ (1.Univ. of NCKU、2.Univ. of CSU、3.Univ. of CSU、4.Univ. of CSU、5.Univ. of CSU、6.Univ. of NCKU、7.Univ. of NCKU , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-25