The Japan Society of Applied Physics

[PS-3-25] Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

B. C. Wang1、S. L. Wu2、C. Y. Wu3、C. W. Huang4、T. Y. Lu5、P. C. Huang6、S. J. Chang7 (1.Univ. of NCKU、2.Univ. of CSU、3.Univ. of CSU、4.Univ. of CSU、5.Univ. of CSU、6.Univ. of NCKU、7.Univ. of NCKU , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-25