[PS-3-25] Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹, S. L. Wu², C. Y. Wu³, C. W. Huang⁴, T. Y. Lu⁵, P. C. Huang⁶, S. J. Chang⁷ (1.Univ. of NCKU, 2.Univ. of CSU, 3.Univ. of CSU, 4.Univ. of CSU, 5.Univ. of CSU, 6.Univ. of NCKU, 7.Univ. of NCKU , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-25