[PS-3-3] Enhanced Subthreshold and Output Characteristics in Tunnel Field -Effect Transistors Using Shallow Junction Technologies

H. Y. Chang¹, S. Chopra², B. Adams², J. Li², S. Sharma², Y. Kim², S. Moffatt², P. Y. Chien¹, B. C. Huang¹, J. C.S. Woo¹ (1.Univ. of California, Los Angeles, 2.Applied Materials Inc , USA)

https://doi.org/10.7567/SSDM.2012.PS-3-3