[PS-3-3] Enhanced Subthreshold and Output Characteristics in Tunnel Field -Effect Transistors Using Shallow Junction Technologies

H. Y. Chang¹、S. Chopra²、B. Adams²、J. Li²、S. Sharma²、Y. Kim²、S. Moffatt²、P. Y. Chien¹、B. C. Huang¹、J. C.S. Woo¹ (1.Univ. of California, Los Angeles、2.Applied Materials Inc , USA)

https://doi.org/10.7567/SSDM.2012.PS-3-3