The Japan Society of Applied Physics

[PS-3-3] Enhanced Subthreshold and Output Characteristics in Tunnel Field -Effect Transistors Using Shallow Junction Technologies

H. Y. Chang1, S. Chopra2, B. Adams2, J. Li2, S. Sharma2, Y. Kim2, S. Moffatt2, P. Y. Chien1, B. C. Huang1, J. C.S. Woo1 (1.Univ. of California, Los Angeles, 2.Applied Materials Inc , USA)

https://doi.org/10.7567/SSDM.2012.PS-3-3