[PS-3-30] Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure

C. R. Yan¹、J. F. Chen¹、C. Y. Lin²、H. T. Hsiu²、Y. C. Liao²、M. T. Yang²、Y. C. Lin²、H. H. Chen² (1.Univ. of Cheng Kung、2.Corp. of Powerchip , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-30