Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure

C. R. Yan; J. F. Chen; C. Y. Lin; H. T. Hsiu; Y. C. Liao; M. T. Yang; Y. C. Lin; H. H. Chen

doi:https://doi.org/10.7567/SSDM.2012.PS-3-30

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-3-30] Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure

C. R. Yan¹, J. F. Chen¹, C. Y. Lin², H. T. Hsiu², Y. C. Liao², M. T. Yang², Y. C. Lin², H. H. Chen² (1.Univ. of Cheng Kung, 2.Corp. of Powerchip , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-30

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