[PS-3-32L] The Experimental Observation of the Process Induced Random Dopant Effect in Trigate MOSFETs

E. R. Hsieh¹、H. M. Tsai¹、S. S. Chung¹、C. H. Tsai²、R. M. Huang²、C. T. Tsai²、C. W. Liang² (1.National Chiao Tung Univ.、2.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-32L