The Japan Society of Applied Physics

2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-3-32L] The Experimental Observation of the Process Induced Random Dopant Effect in Trigate MOSFETs

E. R. Hsieh1, H. M. Tsai1, S. S. Chung1, C. H. Tsai2, R. M. Huang2, C. T. Tsai2, C. W. Liang2 (1.National Chiao Tung Univ., 2.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-32L