[PS-3-5] EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage

T. Mori¹、K. Fukuda¹、T. Yasuda¹、A. Tanabe¹、T. Maeda¹、S. O'uchi¹、Y. Liu¹、W. Mizubayashi¹、M. Masahara¹、H. Ota¹ (1.GNC-AIST , Japan)

https://doi.org/10.7567/SSDM.2012.PS-3-5