[PS-3-5] EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage
T. Mori1, K. Fukuda1, T. Yasuda1, A. Tanabe1, T. Maeda1, S. O'uchi1, Y. Liu1, W. Mizubayashi1, M. Masahara1, H. Ota1
(1.GNC-AIST , Japan)
https://doi.org/10.7567/SSDM.2012.PS-3-5
