[PS-3-6] Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation

Y. J. Yoon¹、S. Cho³、J. H. Seo²、I. M. Kang^1,2、B. G. Park⁴、J. H. Lee^1,2 (1.National Univ. Kyungpook、2.National Univ. Kyungpook , Republic of Korea、3.Univ. of Stanford , USA、4.National Univ. of Seoul , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.PS-3-6