[PS-6-10] Investigation of trapping properties in AlGaN/GaN HEMT heterostructures grown on silicon with thick buffer layers

J. Freedsman¹、T. Kubo¹、T. Egawa¹ (1.Nagoya Inst. of Tech., Research center for nano device and system , Japan)

https://doi.org/10.7567/SSDM.2012.PS-6-10