[PS-6-11] Effects of Annealing Method on the Electrical Characteristics of Solution-Processed InGaZnO Metal-Point-Contact Transistor

S. W. Lee¹, Y. H. Hwang¹, W. J. Cho¹ (1.Univ. of Kwangwoon , Korea)

https://doi.org/10.7567/SSDM.2012.PS-6-11