[PS-6-2] Effects of in situ Surface Passivation of AlGaN/GaN MOS-HEMT: A Simulation Study

P. Somasuntharam¹、X. Liu¹、Y. C. Yeo¹、L. S. Tan¹ (1.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2012.PS-6-2