[PS-6-21] Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation

Y. Yamaguchi¹、K. Hayashi¹、T. Oishi¹、H. Otsuka¹、K. Yamanaka¹、M. Nakayama¹、Y. Miyamoto² (1.Mitsubishi Electric Corp.、2.TokyoTech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-6-21