[PS-6-21] Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation

Y. Yamaguchi¹, K. Hayashi¹, T. Oishi¹, H. Otsuka¹, K. Yamanaka¹, M. Nakayama¹, Y. Miyamoto² (1.Mitsubishi Electric Corp., 2.TokyoTech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-6-21