[PS-6-3] Comparison of Noise and Power Characteristics of Single- and Dual-Gate AlGaAs/InGaAs pHEMTs

C. C. Hu^1,2、S. H. Lin²、D. M. Lin³、C. C. Huang⁴、Y. M. Hsin²、C. K. Lin⁵、Y. C. Wang⁵、Y. J. Chan⁶ (1.Chung-Shan Inst. of Sci. and Tech.、2.National Central Univ.、3.Taiwan Semiconductor Manufac. Corp.、4.Yuan Ze Univ.、5.Win Semiconductors Corp.、6.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-6-3