[PS-6-3] Comparison of Noise and Power Characteristics of Single- and Dual-Gate AlGaAs/InGaAs pHEMTs

C. C. Hu^1,2, S. H. Lin², D. M. Lin³, C. C. Huang⁴, Y. M. Hsin², C. K. Lin⁵, Y. C. Wang⁵, Y. J. Chan⁶ (1.Chung-Shan Inst. of Sci. and Tech., 2.National Central Univ., 3.Taiwan Semiconductor Manufac. Corp., 4.Yuan Ze Univ., 5.Win Semiconductors Corp., 6.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-6-3