Microwave performance of InGaAs MOSFET with InP interfacial layer

H. D. Chang; B. Sun; L. Lu; G. M. Liu; W. Zhao; W. X. Wang; H. G. Liu

doi:https://doi.org/10.7567/SSDM.2012.PS-6-4

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-6-4] Microwave performance of InGaAs MOSFET with InP interfacial layer

H. D. Chang¹, B. Sun¹, L. Lu¹, G. M. Liu¹, W. Zhao¹, W. X. Wang², H. G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences, 2.Inst. of Physics of Chinese Academy of Sciences , china)

https://doi.org/10.7567/SSDM.2012.PS-6-4

▲