Microwave performance of InGaAs MOSFET with InP interfacial layer

H. D. Chang; B. Sun; L. Lu; G. M. Liu; W. Zhao; W. X. Wang; H. G. Liu

doi:https://doi.org/10.7567/SSDM.2012.PS-6-4

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-6-4] Microwave performance of InGaAs MOSFET with InP interfacial layer

H. D. Chang¹、B. Sun¹、L. Lu¹、G. M. Liu¹、W. Zhao¹、W. X. Wang²、H. G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences、2.Inst. of Physics of Chinese Academy of Sciences , china)

https://doi.org/10.7567/SSDM.2012.PS-6-4

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