Electron Focusing Effect in Ballistic Graphene Cross Junction

M. Onuki; S. Masubuchi; T. Yamaguchi; K. Watanabe; T. Taniguchi; T. Machida

doi:https://doi.org/10.7567/SSDM.2012.PS-9-4

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-9-4] Electron Focusing Effect in Ballistic Graphene Cross Junction

M. Onuki¹、S. Masubuchi¹、T. Yamaguchi¹、K. Watanabe²、T. Taniguchi²、T. Machida^1,3 (1.Univ. of Tokyo、2.National Inst. of Material Science、3.Japan Sci. and Tech. Agency , Japan)

https://doi.org/10.7567/SSDM.2012.PS-9-4

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