[A-2-3] A New Lateral Conductive Bridge Random Access Memory (L-CBRAM) by Fully CMOS Logic Compatible Process

Y.C. Lin¹、Y.W. Chin¹、M.C. Hsieh¹、Y.D. Chih²、K.H. Tsai³、M.J. Tsai³、Y.C. King¹、C.J. Lin¹ (1.National Tsing-Hua Univ.、2.Taiwan Semiconductor Manufacturing Company、3.Industrial Technology Research Inst. (Taiwan))

https://doi.org/10.7567/SSDM.2013.A-2-3