[A-2-4] Excellent Scalability Including Self-Heating Phenomena of Vertical-Channel Field-Effect-Diode (FED) Type Capacitorless One Transistor DRAM Cell

T. Imamoto^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST (Japan))

https://doi.org/10.7567/SSDM.2013.A-2-4