[A-2-5] Fluorine ion implantation optimization in Saddle-Fin array devices for sub-40-nm DRAM technology

K.L. Chiang^1,2、W.P. Lee^1,2、C.C. Lee¹、C.S. Sung¹、C.K. Wei^1,2、C.M. Yang^1,2、J.C. Wang²、P. Kao¹、C.Y. Lee²、H.H. Chen¹、C.Y. Hsiao¹、C.S. Lai² (1.Chang Gung Univ.、2.Inotera Memories Inc. (Taiwan))

https://doi.org/10.7567/SSDM.2013.A-2-5