[A-6-3] Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write

S.Y. Kim^1,2、J.M. Baek¹、D.J. Seo¹、J.K. Park¹、J.H. Chun¹、K.W. Kwon¹ (1.Sungkyunkwan Univ.、2.Memory Division, Samsung Electronics Corp. Ltd. (Korea))

https://doi.org/10.7567/SSDM.2013.A-6-3