Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write

S.Y. Kim; J.M. Baek; D.J. Seo; J.K. Park; J.H. Chun; K.W. Kwon

doi:https://doi.org/10.7567/SSDM.2013.A-6-3

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-6-3] Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write

S.Y. Kim^1,2, J.M. Baek¹, D.J. Seo¹, J.K. Park¹, J.H. Chun¹, K.W. Kwon¹ (1.Sungkyunkwan Univ., 2.Memory Division, Samsung Electronics Corp. Ltd. (Korea))

https://doi.org/10.7567/SSDM.2013.A-6-3

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