Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application

Y.M. Koo; Y.H. Choi; E.J. Cha; D.S. Lee; J.Y. Woo; J.H. Song; K.B. Moon; J.S. Park; S.H. Lee; H.S. Hwang

doi:https://doi.org/10.7567/SSDM.2013.A-7-3

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-7-3] Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application

Y.M. Koo¹, Y.H. Choi¹, E.J. Cha¹, D.S. Lee¹, J.Y. Woo¹, J.H. Song¹, K.B. Moon¹, J.S. Park¹, S.H. Lee¹, H.S. Hwang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

https://doi.org/10.7567/SSDM.2013.A-7-3

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