[A-7-3] Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application

Y.M. Koo¹、Y.H. Choi¹、E.J. Cha¹、D.S. Lee¹、J.Y. Woo¹、J.H. Song¹、K.B. Moon¹、J.S. Park¹、S.H. Lee¹、H.S. Hwang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

https://doi.org/10.7567/SSDM.2013.A-7-3