Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme

A. Veloso; G. Boccardi; L.A. Ragnarsson; Y. Higuchi; H. Arimura; J.W. Lee; E. Simoen; M.J. Cho; Ph.J. Roussel; V. Paraschiv; X. Shi; T. Schram; S.A. Chew; S. Brus; A. Dangol; E. Vecchio; F. Sebaai; K. Kellens; N. Heylen; K. Devriendt; H. Dekkers; A. Van Ammel; T. Witters; T. Conard; I. Vaesen; O. Richard; H. Bender; R. Athimulam; A. Thean; N. Horiguchi

doi:https://doi.org/10.7567/SSDM.2013.B-1-2

[B-1-2] Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme

A. Veloso¹, G. Boccardi¹, L.A. Ragnarsson¹, Y. Higuchi², H. Arimura^1,3, J.W. Lee^1,3, E. Simoen¹, M.J. Cho¹, Ph.J. Roussel¹, V. Paraschiv¹, X. Shi¹, T. Schram¹, S.A. Chew¹, S. Brus¹, A. Dangol¹, E. Vecchio¹, F. Sebaai¹, K. Kellens¹, N. Heylen¹, K. Devriendt¹, H. Dekkers¹, A. Van Ammel¹, T. Witters¹, T. Conard¹, I. Vaesen¹, O. Richard¹, H. Bender¹, R. Athimulam¹, A. Thean¹, N. Horiguchi¹ (1.Imec, 2.Panasonic, 3.K. U. Leuven (Belgium))

https://doi.org/10.7567/SSDM.2013.B-1-2

2013 International Conference on Solid State Devices and Materials

[B-1-2] Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme