[B-2-2] Low NiGe Contact Resistances by Carrier Activation Enhancement (CAE) Techniques for Ge CMOSFETs

H. Miyoshi¹、T. Ueno¹、Y. Hirota¹、J. Yamanaka²、K. Arimoto²、K. Nakagawa²、T. Kaitsuka¹ (1.Tokyo Electron Ltd.、2.Univ. of Yamanashi (Japan))

https://doi.org/10.7567/SSDM.2013.B-2-2