[B-2-2] Low NiGe Contact Resistances by Carrier Activation Enhancement (CAE) Techniques for Ge CMOSFETs

H. Miyoshi¹, T. Ueno¹, Y. Hirota¹, J. Yamanaka², K. Arimoto², K. Nakagawa², T. Kaitsuka¹ (1.Tokyo Electron Ltd., 2.Univ. of Yamanashi (Japan))

https://doi.org/10.7567/SSDM.2013.B-2-2