Modified Deal-Grove model for the thermal oxidation of Ge and Al<sub>2</sub>O<sub>3</sub> capped Ge

S.K. Wang; X.L. Wang; L. Han; W. Zhao; B. Sun; W.W. Wang.; C. Zhao; H.G. Liu

doi:https://doi.org/10.7567/SSDM.2013.B-4-3

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-4-3] Modified Deal-Grove model for the thermal oxidation of Ge and Al₂O₃ capped Ge

S.K. Wang¹, X.L. Wang¹, L. Han^1,2, W. Zhao¹, B. Sun¹, W.W. Wang.¹, C. Zhao¹, H.G. Liu¹ (1.Inst. of Microelectronics, Chinese Academy of Sciences, 2.Southeast University (China))

https://doi.org/10.7567/SSDM.2013.B-4-3

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2013 International Conference on Solid State Devices and Materials

[B-4-3] Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge

[B-4-3] Modified Deal-Grove model for the thermal oxidation of Ge and Al₂O₃ capped Ge