[B-6-1] Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization

Y. Yang¹、P. Guo¹、W. Wang¹、X. Gong¹、L. Wang¹、K.L. Low¹、G. Han¹、Y.C. Yeo¹ (1.National Univ. of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2013.B-6-1