[B-6-1] Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization
Y. Yang1, P. Guo1, W. Wang1, X. Gong1, L. Wang1, K.L. Low1, G. Han1, Y.C. Yeo1
(1.National Univ. of Singapore (Singapore))
https://doi.org/10.7567/SSDM.2013.B-6-1