The Japan Society of Applied Physics

[B-6-1] Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization

Y. Yang1, P. Guo1, W. Wang1, X. Gong1, L. Wang1, K.L. Low1, G. Han1, Y.C. Yeo1 (1.National Univ. of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2013.B-6-1