Formation and electronic properties of X- and T- shaped InSb nanowires and nanowire networks

D. Car; M.A. Verheijen; I. van Weperen; S.M. Frolov; L.P. Kouwenhoven; E.P.A.M. Bakkers; S.R. Plissard

doi:https://doi.org/10.7567/SSDM.2013.C-2-1

[C-2-1] Formation and electronic properties of X- and T- shaped InSb nanowires and nanowire networks

D. Car¹、M.A. Verheijen^1,2、I. van Weperen³、S.M. Frolov^3,4、L.P. Kouwenhoven³、E.P.A.M. Bakkers^1,3、S.R. Plissard^1,3 (1.Eindhoven Univ. of Tech.、2.Philips Innovation Services、3.Delft Univ. of Tech.、4.Univ. of Pittsburgh (The Netherlands))

https://doi.org/10.7567/SSDM.2013.C-2-1

2013 International Conference on Solid State Devices and Materials

[C-2-1] Formation and electronic properties of X- and T- shaped InSb nanowires and nanowire networks