[C-4-1] Performance Comparison of Graphene Nanoribbon, Si Nanowire and InAs Nanowire FETs in the Ballistic Transport Limit

N. Hasegawa¹、K. Shimoida¹、H. Tsuchiya^1,2、Y. Kamakura^2,3、N. Mori^2,3、M. Ogawa¹ (1.Univ. of Kobe、2.JST CREST、3.Univ. of Osaka (Japan))

https://doi.org/10.7567/SSDM.2013.C-4-1