[C-4-1] Performance Comparison of Graphene Nanoribbon, Si Nanowire and InAs Nanowire FETs in the Ballistic Transport Limit

N. Hasegawa¹, K. Shimoida¹, H. Tsuchiya^1,2, Y. Kamakura^2,3, N. Mori^2,3, M. Ogawa¹ (1.Univ. of Kobe, 2.JST CREST, 3.Univ. of Osaka (Japan))

https://doi.org/10.7567/SSDM.2013.C-4-1