The Japan Society of Applied Physics

[D-1-4] The Influence of Post-Etch InGaAs Fin Profile on Electrical Performance

Ts. Ivanov1,2, A. Pourghaderi1, D. Lin1, J.K. Yu3, S. Tan3, K. Mikhaylich3, Y. Kimura3, D. Hellin4, J. Geypen1, H. Bender1, J. Vertommen4, G. Kamarthy3, N. Collaert1, J. Marks3, V. Vahedi3, R. Arghavani3, A. Thean1 (1.IMEC, 2.KULeuven, 3.Lam Res., USA, 4.Lam Res., Belgium (Belgium))

https://doi.org/10.7567/SSDM.2013.D-1-4