[D-3-1] Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density

D.H. Zadeh¹, H. Oomine¹, K. Kakushima², Y. Kataoka², A. Nishiyama², N. Sugii², H. Wakabayashi², K. Tsutsui¹, K. Natori¹, H. Iwai¹ (1.Frontier Research Center, Tokyo Inst. of Tech., 2.Interdisciplinary Graduate School of Science and Engineering, Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.D-3-1