[D-3-2] Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling

S. Koba¹、M. Ohmori¹、Y. Maegawa¹、H. Tsuchiya^1,2、Y. Kamakura^2,3、N. Mori^2,3、M. Ogawa¹ (1.Kobe Univ.、2.JST-CREST、3.Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.D-3-2