[D-3-2] Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling

S. Koba¹, M. Ohmori¹, Y. Maegawa¹, H. Tsuchiya^1,2, Y. Kamakura^2,3, N. Mori^2,3, M. Ogawa¹ (1.Kobe Univ., 2.JST-CREST, 3.Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.D-3-2