The Japan Society of Applied Physics

[D-3-4] Effect of Alloy Scattering on Hole Mobility of sSi/sSiGe/sSOI Quantum Well pMOSFETs

W. Wu1, W. Yu2, Q. Zhao3, J. Sun1, D. Zhai1, Y. Shi1, Y. Zhao1,4 (1.Nanjing Univ., 2.State Key Lab. of Functional Materials and Informatics, 3.Peter Grünberg Inst. 9, 4.State Key Lab. of Silicon Materials (China))

https://doi.org/10.7567/SSDM.2013.D-3-4