Speed Enhancement at V<sub>dd</sub> = 0.4 V and Randam τ<sub>pd</sub> Variability Reduction of Silicon on Thin Buried Oxide (SOTB)

H. Makiyama; Y. Yamamoto; H. Shinohara; T. Iwamatsu; H. Oda; N. Sugii; K. Ishibashi; Y. Yamaguchi

doi:https://doi.org/10.7567/SSDM.2013.D-6-2

[D-6-2] Speed Enhancement at V_dd = 0.4 V and Randam τ_pd Variability Reduction of Silicon on Thin Buried Oxide (SOTB)

H. Makiyama¹、Y. Yamamoto¹、H. Shinohara¹、T. Iwamatsu¹、H. Oda¹、N. Sugii¹、K. Ishibashi²、Y. Yamaguchi¹ (1.Low-power Electronics Association & Project (LEAP)、2.The Univ. of Electro-Communications (Japan))

https://doi.org/10.7567/SSDM.2013.D-6-2

2013 International Conference on Solid State Devices and Materials

[D-6-2] Speed Enhancement at Vdd = 0.4 V and Randam τpd Variability Reduction of Silicon on Thin Buried Oxide (SOTB)

[D-6-2] Speed Enhancement at V_dd = 0.4 V and Randam τ_pd Variability Reduction of Silicon on Thin Buried Oxide (SOTB)