CMOS-Compatible Mesa-Etched Ultrathin Epitaxial Channel Tunnel Field-Effect Transistors

Y. Morita; T. Mori; S. Migita; W. Mizubayashi; A. Tanabe; K. Fukuda; T. Matsukawa; K. Endo; S. O'uchi; Y.X. Liu; M. Masahara; H. Ota

doi:https://doi.org/10.7567/SSDM.2013.D-7-2

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[D-7-2] CMOS-Compatible Mesa-Etched Ultrathin Epitaxial Channel Tunnel Field-Effect Transistors

Y. Morita¹, T. Mori¹, S. Migita¹, W. Mizubayashi¹, A. Tanabe¹, K. Fukuda¹, T. Matsukawa¹, K. Endo¹, S. O'uchi¹, Y.X. Liu¹, M. Masahara¹, H. Ota¹ (1.GNC, AIST (Japan))

https://doi.org/10.7567/SSDM.2013.D-7-2

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