In<sub>0.53</sub>Ga<sub>0.47</sub>As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction

Q. Smets; A.S. Verhulst; R. Rooyackers; C. Merckling; D. Lin; E. Simoen; A. Alian; M. Cantoro; A. Pourghaderi; K.H. Kao; D. Verreck; K. De Meyer; N. Collaert; V.Y. Thean; M.M. Heyns

doi:https://doi.org/10.7567/SSDM.2013.D-7-4

[D-7-4] In_0.53Ga_0.47As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction

Q. Smets^1,2、A.S. Verhulst¹、R. Rooyackers¹、C. Merckling¹、D. Lin¹、E. Simoen¹、A. Alian¹、M. Cantoro¹、A. Pourghaderi¹、K.H. Kao^1,2、D. Verreck^1,2、K. De Meyer^1,2、N. Collaert¹、V.Y. Thean¹、M.M. Heyns^1,2 (1.IMEC、2.KULeuven (Belgium))

https://doi.org/10.7567/SSDM.2013.D-7-4

2013 International Conference on Solid State Devices and Materials

[D-7-4] In0.53Ga0.47As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction

[D-7-4] In_0.53Ga_0.47As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction