The Japan Society of Applied Physics

[D-7-4] In0.53Ga0.47As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction

Q. Smets1,2, A.S. Verhulst1, R. Rooyackers1, C. Merckling1, D. Lin1, E. Simoen1, A. Alian1, M. Cantoro1, A. Pourghaderi1, K.H. Kao1,2, D. Verreck1,2, K. De Meyer1,2, N. Collaert1, V.Y. Thean1, M.M. Heyns1,2 (1.IMEC, 2.KULeuven (Belgium))

https://doi.org/10.7567/SSDM.2013.D-7-4